International Rectifier
IRF7341Q
Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
PackageSOIC
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Technical Specifications
International Rectifier IRF7341Q technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
5.1A
Drain to Source Voltage (Vdss)
55V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.4W
Nominal Vgs
1V
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Threshold Voltage
1V
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF7341Q Datasheet
Download the complete datasheet for International Rectifier IRF7341Q to view detailed technical specifications.
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