International Rectifier
IRF7341QPBF
Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7341QPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.1A |
| Fall Time | 12.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 780pF |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 9.2ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7341QPBF Datasheet
Download the complete datasheet for International Rectifier IRF7341QPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.