International Rectifier
IRF7342
Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
PackageSOIC
Current Rating-3.4A
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF7342 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3.4A
Current Rating
-3.4A
Drain to Source Breakdown Voltage
-55V
Drain to Source Resistance
150mR
Drain to Source Voltage (Vdss)
55V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
690pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
2
Package Quantity
95
Packaging
Rail/Tube
Power Dissipation
2W
Rds On Max
105mR
RoHS Compliant
No
DC Rated Voltage
-55V
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF7342 Datasheet
Download the complete datasheet for International Rectifier IRF7342 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.