International Rectifier
IRF7342
Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
PackageSOIC
Current Rating-3.4A
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF7342 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.4A |
| Current Rating | -3.4A |
| Drain to Source Breakdown Voltage | -55V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 690pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Power Dissipation | 2W |
| Rds On Max | 105mR |
| RoHS Compliant | No |
| DC Rated Voltage | -55V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF7342 Datasheet
Download the complete datasheet for International Rectifier IRF7342 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.