Dual P-channel MOSFET featuring 55V drain-source voltage and 3.4A continuous drain current. Offers a low 105mΩ maximum drain-source on-resistance. Operates with a gate-source voltage up to ±20V and a nominal Vgs of -1V. This surface-mount SOIC package component has a maximum power dissipation of 2W and a maximum operating temperature of 150°C. Includes fast switching characteristics with turn-on delay of 14ns and fall time of 22ns.
PackageSOIC
Current Rating-3.4A
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF7342PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3.4A
Current Rating
-3.4A
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
105mR
Fall Time
22ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
690pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
-1V
Number of Elements
2
Packaging
Tape and Reel
Power Dissipation
2W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Row Spacing
6.3mm
Turn-Off Delay Time
43ns
Turn-On Delay Time
14ns
DC Rated Voltage
-55V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7342PBF Datasheet
Download the complete datasheet for International Rectifier IRF7342PBF to view detailed technical specifications.
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