International Rectifier
IRF7343
Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
PackageSOIC
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF7343 technical specifications.
General
Package/Case
SOIC
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Number of Elements
2
Power Dissipation
2W
Radiation Hardening
No
RoHS Compliant
No
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF7343 Datasheet
Download the complete datasheet for International Rectifier IRF7343 to view detailed technical specifications.
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