International Rectifier
IRF7379
Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
PackageSOIC
Current Rating5.8A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7379 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.3A |
| Current Rating | 5.8A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | N and P-Channel |
| Input Capacitance | 520pF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Rds On Max | 45mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF7379 Datasheet
Download the complete datasheet for International Rectifier IRF7379 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.