International Rectifier
IRF7379QPBF
Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7379QPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.8A |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 440pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7379QPBF Datasheet
Download the complete datasheet for International Rectifier IRF7379QPBF to view detailed technical specifications.
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