International Rectifier
IRF7389PBF
Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
PackageSOIC
Current Rating7.3A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7389PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7.3A
Current Rating
7.3A
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
580mR
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
650pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
1V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Row Spacing
6.3mm
Turn-Off Delay Time
34ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7389PBF Datasheet
Download the complete datasheet for International Rectifier IRF7389PBF to view detailed technical specifications.
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