N-Channel Power MOSFET, 20V Vds, 6.8A Continuous Drain Current. Features 35mΩ Max Drain-Source On-Resistance and 2.5W Max Power Dissipation. Operates from -55°C to 150°C with a 12V Gate-Source Voltage. Surface mount SOIC package with 5.1ns turn-on delay and 24ns turn-off delay. RoHS compliant and lead-free.
PackageSOIC
Current Rating6.8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF7402PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
6.8A
Current Rating
6.8A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
35MR
Dual Supply Voltage
20V
Fall Time
32ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
650pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
700mV
Number of Elements
1
Package Quantity
95
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
35mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Row Spacing
6.3mm
Series
HEXFET®
Threshold Voltage
700mV
Turn-Off Delay Time
24ns
Turn-On Delay Time
5.1ns
DC Rated Voltage
20V
Width
4.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7402PBF Datasheet
Download the complete datasheet for International Rectifier IRF7402PBF to view detailed technical specifications.
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