N-Channel Power MOSFET, 20V Vds, 6.8A Continuous Drain Current. Features 35mΩ Max Drain-Source On-Resistance and 2.5W Max Power Dissipation. Operates from -55°C to 150°C with a 12V Gate-Source Voltage. Surface mount SOIC package with 5.1ns turn-on delay and 24ns turn-off delay. RoHS compliant and lead-free.
PackageSOIC
Current Rating6.8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF7402PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.8A |
| Current Rating | 6.8A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 35MR |
| Dual Supply Voltage | 20V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 650pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 700mV |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Series | HEXFET® |
| Threshold Voltage | 700mV |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 5.1ns |
| DC Rated Voltage | 20V |
| Width | 4.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7402PBF Datasheet
Download the complete datasheet for International Rectifier IRF7402PBF to view detailed technical specifications.
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