IRF7403

Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,

PackageTO-262-3

MountingThrough Hole

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International Rectifier IRF7403 technical specifications.

Package/Case

TO-262-3

Continuous Drain Current (ID)

80A

Drain to Source Voltage (Vdss)

75V

Input Capacitance

3.07nF

Max Power Dissipation

140W

Mount

Through Hole

Packaging

Rail/Tube

Rds On Max

9mR

RoHS Compliant

Series

HEXFET®

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.