N-Channel Power MOSFET, featuring 30V drain-source breakdown voltage and 8.5A continuous drain current. This single-element silicon FET offers a low 0.022ohm drain-source resistance and 1.2nF input capacitance. Designed for surface mounting in an SOIC package, it operates from -55°C to 150°C with a maximum power dissipation of 2.5W. Includes 10ns turn-on and 40ns fall times.
PackageSOIC
Current Rating8.5A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
International Rectifier IRF7403PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.5A |
| Current Rating | 8.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7403PBF Datasheet
Download the complete datasheet for International Rectifier IRF7403PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
