N-Channel Power MOSFET, featuring 30V drain-source breakdown voltage and 8.5A continuous drain current. This single-element silicon FET offers a low 0.022ohm drain-source resistance and 1.2nF input capacitance. Designed for surface mounting in an SOIC package, it operates from -55°C to 150°C with a maximum power dissipation of 2.5W. Includes 10ns turn-on and 40ns fall times.
PackageSOIC
Current Rating8.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF7403PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
8.5A
Current Rating
8.5A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
30V
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.2nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
1V
Number of Elements
1
Package Quantity
95
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Row Spacing
6.3mm
Series
HEXFET® Series
Turn-Off Delay Time
42ns
Turn-On Delay Time
10ns
DC Rated Voltage
30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7403PBF Datasheet
Download the complete datasheet for International Rectifier IRF7403PBF to view detailed technical specifications.
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