P-channel MOSFET with 30V drain-source breakdown voltage and 6.7A continuous drain current. Features 45mΩ maximum drain-source on-resistance and 1.1nF input capacitance. Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 2.5W. Packaged in an 8-pin SOIC surface-mount configuration, supplied on tape and reel.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7406GTRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -5.8A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 47ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.1nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 45mR |
| Series | HEXFET® |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 16ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7406GTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7406GTRPBF to view detailed technical specifications.
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