
N-Channel Power MOSFET, 30V Drain-Source Voltage, 13A Continuous Drain Current, and 11mΩ Maximum Drain-Source On-Resistance. Features a 4mm width, 5mm length, and 1.5mm height in an SOIC package for surface mounting. Operates from -55°C to 150°C with a maximum power dissipation of 2.5W. Includes a nominal gate-source voltage of 3V and a maximum gate-source voltage of 20V.
International Rectifier IRF7413TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 11mR |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.8nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 2.5W |
| Rds On Max | 11mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 8.6ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7413TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
