N-Channel Power MOSFET, 30V Drain-Source Voltage, 13A Continuous Drain Current, and 11mΩ Maximum Drain-Source On-Resistance. Features a 4mm width, 5mm length, and 1.5mm height in an SOIC package for surface mounting. Operates from -55°C to 150°C with a maximum power dissipation of 2.5W. Includes a nominal gate-source voltage of 3V and a maximum gate-source voltage of 20V.
PackageSOIC
Current Rating13A
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier IRF7413TRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
13A
Current Rating
13A
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
11mR
Fall Time
46ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.8nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
3V
Number of Elements
1
Package Quantity
1
Packaging
Cut Tape
Power Dissipation
2.5W
Rds On Max
11mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
52ns
Turn-On Delay Time
8.6ns
DC Rated Voltage
30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7413TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7413TRPBF to view detailed technical specifications.
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