International Rectifier
IRF7416GTRPBF
Mosfet, P-channel, -30V, -10A, 20 Mohm, 61 Nc Qg, SO-8, Halogen-free
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7416GTRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| Series | HEXFET® |
| Turn-Off Delay Time | 59ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7416GTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7416GTRPBF to view detailed technical specifications.
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