International Rectifier
IRF7422D2
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
PackageTO-220-3
MountingThrough Hole, Surface Mount
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Technical Specifications
International Rectifier IRF7422D2 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
14A
Drain to Source Voltage (Vdss)
55V
Fall Time
33ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
370pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
29W
Mount
Through Hole, Surface Mount
Packaging
Rail/Tube
Rds On Max
70mR
RoHS Compliant
No
Series
HEXFET®
Turn-Off Delay Time
51ns
Turn-On Delay Time
8.4ns
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF7422D2 Datasheet
Download the complete datasheet for International Rectifier IRF7422D2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.