International Rectifier
IRF7459
Power Field-Effect Transistor, 12A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7459 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 2.48nF |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Rds On Max | 9mR |
| RoHS Compliant | No |
| Series | HEXFET® |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF7459 Datasheet
Download the complete datasheet for International Rectifier IRF7459 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.