The IRF7471TRPBF is a surface mount N-CHANNEL HEXFET MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current rating of 10A and a drain to source breakdown voltage of 40V. The device features a drain to source resistance of 16mR and a maximum power dissipation of 2.5W. It is RoHS compliant and packaged in a SOIC package.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
Quick Jump:
Technical Specifications
International Rectifier IRF7471TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.82nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 2.5W |
| Rds On Max | 13mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7471TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7471TRPBF to view detailed technical specifications.
No datasheet is available for this part.