International Rectifier
IRF7473
Power Field-Effect Transistor, 6.9A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
PackageTO-263-3
Current Rating6.9A
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier IRF7473 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
59A
Current Rating
6.9A
Drain to Source Voltage (Vdss)
100V
Input Capacitance
2.9nF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Surface Mount
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
18mR
RoHS Compliant
No
Series
HEXFET®
DC Rated Voltage
100V
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF7473 Datasheet
Download the complete datasheet for International Rectifier IRF7473 to view detailed technical specifications.
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