International Rectifier
IRF7473PBF
Power Field-Effect Transistor, 6.9A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
PackageSOIC
Current Rating6.9A
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier IRF7473PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.9A |
| Current Rating | 6.9A |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 3.18nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 5.5V |
| Number of Elements | 1 |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 24ns |
| DC Rated Voltage | 100V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7473PBF Datasheet
Download the complete datasheet for International Rectifier IRF7473PBF to view detailed technical specifications.
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