International Rectifier
IRF7474PBF
Small Signal Field-Effect Transistor, 4.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7474PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 100V |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.4nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 5.5V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 14ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7474PBF Datasheet
Download the complete datasheet for International Rectifier IRF7474PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.