IRF7476PBF

N-Channel MOSFET, 15A ID, 12V Vds, SOIC, Surface Mount

N-Channel MOSFET, surface mount, featuring 15A continuous drain current and 12V drain-source breakdown voltage. This single-element silicon FET offers a low 8mΩ drain-source resistance and operates within a -55°C to 150°C temperature range. Key electrical characteristics include a 1.9V threshold voltage, 2.55nF input capacitance, and fast switching times with an 11ns turn-on delay and 19ns turn-off delay. The device is housed in a lead-free, RoHS-compliant SOIC package with a maximum power dissipation of 2.5W.

PackageSOIC

Current Rating15A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

International Rectifier IRF7476PBF technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	15A
Current Rating	15A
Drain to Source Breakdown Voltage	12V
Drain to Source Resistance	8mR
Drain to Source Voltage (Vdss)	12V
Dual Supply Voltage	12V
Fall Time	8.3ns
Gate to Source Voltage (Vgs)	12V
Height	1.5mm
Input Capacitance	2.55nF
Lead Free	Lead Free
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.5W
Mount	Surface Mount
Nominal Vgs	1.9V
Number of Elements	1
Package Quantity	95
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	2.5W
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	HEXFET® Series
Termination	SMD/SMT
Threshold Voltage	1.9V
Turn-Off Delay Time	19ns
Turn-On Delay Time	11ns
DC Rated Voltage	12V
Width	4mm