International Rectifier
IRF7478QPBF
Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7478QPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 60V |
| Dual Supply Voltage | 60V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.74nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 7.7ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7478QPBF Datasheet
Download the complete datasheet for International Rectifier IRF7478QPBF to view detailed technical specifications.
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