International Rectifier
IRF7478QTRPBF
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7478QTRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.74nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 26mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 7.7ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7478QTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7478QTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.