International Rectifier
IRF7478TR
Power Field-Effect Transistor, 7A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
PackageSOIC
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier IRF7478TR technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF7478TR Datasheet
Download the complete datasheet for International Rectifier IRF7478TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.