IRF7492

Power Field-Effect Transistor, 3.7A I(D), 200V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

PackageSOIC

MountingSurface Mount

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International Rectifier IRF7492 technical specifications.

Package/Case

SOIC

Continuous Drain Current (ID)

3.7A

Drain to Source Voltage (Vdss)

200V

Input Capacitance

1.82nF

Max Power Dissipation

2.5W

Mount

Surface Mount

Package Quantity

Packaging

Rail/Tube

Rds On Max

79mR

RoHS Compliant

Series

HEXFET®

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.