International Rectifier
IRF7493TR
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7493TR technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9.3A |
| Drain to Source Voltage (Vdss) | 80V |
| Input Capacitance | 1.51nF |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Rds On Max | 15mR |
| RoHS Compliant | No |
| Series | HEXFET® |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF7493TR Datasheet
Download the complete datasheet for International Rectifier IRF7493TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.