International Rectifier
IRF7503PBF
Power Field-Effect Transistor, 2.4A I(D), 30V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8, SOIC-8
PackageModule
Power1.25W
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Technical Specifications
International Rectifier IRF7503PBF technical specifications.
General
| Package/Case | Module |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Voltage (Vdss) | 30V |
| Lead Pitch | 0.65mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Nominal Vgs | 1V |
| Packaging | Cut Tape |
| Power Dissipation | 1.25W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 4.24mm |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7503PBF Datasheet
Download the complete datasheet for International Rectifier IRF7503PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.