P-Channel MOSFET with integrated Schottky diode, featuring a -20V drain-source breakdown voltage and 1.7A continuous drain current. Offers a low 270mΩ drain-source resistance (Rds On Max) and a 5.4nC charge. Operates with a 12V gate-source voltage and boasts fast switching times, including a 9.1ns turn-on delay and 43ns fall time. Packaged in a compact MSOP surface-mount case, this RoHS compliant component has a maximum power dissipation of 1.25W and operates across a wide temperature range of -55°C to 150°C.
International Rectifier IRF7524D1TRPBF technical specifications.
| Package/Case | MSOP |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 43ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.86mm |
| Input Capacitance | 240pF |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| RoHS Compliant | Yes |
| Series | FETKY™ |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 9.1ns |
| Width | 3mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7524D1TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
