N-Channel Power MOSFET, 20V Drain-Source Voltage (Vdss) and 5.4A Continuous Drain Current (ID). Features 30mΩ maximum Drain-Source On-Resistance and 1.2V nominal Gate-Source Voltage (Vgs). This silicon, metal-oxide semiconductor FET is housed in a MICRO-8 package, suitable for surface mounting with dimensions of 3mm length and 3mm width, and a height of 0.86mm. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.3W. Includes 8.5ns turn-on and 36ns turn-off delay times.
PackageMSOP
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7530TRPBF technical specifications.
General
| Package/Case | MSOP |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 30mR |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.86mm |
| Input Capacitance | 1.31nF |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Nominal Vgs | 1.2V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 8.5ns |
| Width | 3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7530TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7530TRPBF to view detailed technical specifications.
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