N-channel MOSFET transistor, 30V drain-source voltage, 5.6A continuous drain current. Features 35mΩ maximum drain-source on-resistance and 1.8W power dissipation. Operates from -55°C to 150°C, with a gate-source voltage rating of 20V. Packaged in an 8-pin SO surface-mount package on tape and reel.
PackageSO
Current Rating5.6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF7603TRPBF technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 5.6A |
| Current Rating | 5.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 520pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 1.8W |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 5.7ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7603TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7603TRPBF to view detailed technical specifications.
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