International Rectifier
IRF7606PBF
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8, SOIC-8
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7606PBF technical specifications.
General
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 13ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7606PBF Datasheet
Download the complete datasheet for International Rectifier IRF7606PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.