International Rectifier
IRF7665S2TRPBF
Power Field-Effect Transistor, 4.1A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2
MountingSurface Mount
PolarityN-CHANNEL
Power30W
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Technical Specifications
International Rectifier IRF7665S2TRPBF technical specifications.
General
| Continuous Drain Current (ID) | 14.4A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 3.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 515pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 62mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 7.1ns |
| Turn-On Delay Time | 3.8ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7665S2TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7665S2TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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