
P-channel MOSFET with a -40V drain-source breakdown voltage and a continuous drain current of 6A. Features a low 28mΩ drain-source on-resistance at a nominal Vgs of -3V. This surface-mount component, packaged in TSSOP, offers a maximum power dissipation of 1.5W and operates within a temperature range of -55°C to 150°C. Includes 5.22nF input capacitance and is RoHS compliant.
International Rectifier IRF7703TRPBF technical specifications.
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | -40V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 28MR |
| Dual Supply Voltage | -40V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.22nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 1.5W |
| Rds On Max | 28mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 155ns |
| Turn-On Delay Time | 43ns |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7703TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.