P-channel MOSFET transistor in TSSOP package, featuring a continuous drain current of 7A and a drain-source breakdown voltage of -30V. Offers a low drain-source on-resistance of 22mR at a gate-source voltage of 20V. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 1.51W. Surface mountable and supplied on tape and reel, this RoHS compliant component is designed for efficient switching applications.
PackageTSSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.51W
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Technical Specifications
International Rectifier IRF7706TRPBF technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 22MR |
| Fall Time | 122ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.05mm |
| Input Capacitance | 2.211nF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.51W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.51W |
| Radiation Hardening | No |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 244ns |
| Turn-On Delay Time | 17ns |
| Width | 4.5mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7706TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7706TRPBF to view detailed technical specifications.
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