P-channel MOSFET transistor in TSSOP package, featuring a continuous drain current of 7A and a drain-source breakdown voltage of -30V. Offers a low drain-source on-resistance of 22mR at a gate-source voltage of 20V. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 1.51W. Surface mountable and supplied on tape and reel, this RoHS compliant component is designed for efficient switching applications.
PackageTSSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.51W
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Technical Specifications
International Rectifier IRF7706TRPBF technical specifications.
General
Package/Case
TSSOP
Continuous Drain Current (ID)
7A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
36mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
22MR
Fall Time
122ns
Gate to Source Voltage (Vgs)
20V
Height
1.05mm
Input Capacitance
2.211nF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.51W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.51W
Radiation Hardening
No
Rds On Max
22mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
244ns
Turn-On Delay Time
17ns
Width
4.5mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7706TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7706TRPBF to view detailed technical specifications.
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