International Rectifier
IRF7739L2TRPBF
Power Field-Effect Transistor, 375A I(D), 40V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9
MountingSurface Mount
PolarityN-CHANNEL
Power3.8W
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Technical Specifications
International Rectifier IRF7739L2TRPBF technical specifications.
General
Continuous Drain Current (ID)
46A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
11.88nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Surface Mount
Number of Elements
1
Package Quantity
4000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.8W
Radiation Hardening
No
Rds On Max
1mR
RoHS Compliant
Yes
Series
HEXFET®
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7739L2TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7739L2TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.