N-Channel Power MOSFET featuring 75V drain-source voltage and 375A continuous drain current. Offers a low on-resistance of 2.3mΩ at a gate-source voltage of 10V. Includes an input capacitance of 12.222nF and a maximum power dissipation of 3.3W. Designed for surface mounting with a tape and reel package. This component is HALOGEN FREE and ROHS COMPLIANT.
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7759L2TRPBF technical specifications.
General
| Continuous Drain Current (ID) | 375A |
| Drain to Source Voltage (Vdss) | 75V |
| Input Capacitance | 12.222nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 3.3W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Rds On Max | 2.3mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7759L2TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7759L2TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.