N-Channel Power MOSFET, 100V Vds, 20A Continuous Drain Current, 3.5mΩ Max Rds(on). Features 44ns typical turn-on delay and 92ns typical turn-off delay, with a 41ns fall time. Operates from -55°C to 175°C, offering 125W max power dissipation. Surface mount package with 11.56nF input capacitance. RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power125W
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Technical Specifications
International Rectifier IRF7769L2TR1PBF technical specifications.
General
Continuous Drain Current (ID)
20A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
2.8mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
3.5MR
Fall Time
41ns
Gate to Source Voltage (Vgs)
20V
Height
0.496mm
Input Capacitance
11.56nF
Lead Free
Lead Free
Length
9.15mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.3W
Mount
Surface Mount
Nominal Vgs
2.7V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
3.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
2.7V
Turn-Off Delay Time
92ns
Turn-On Delay Time
44ns
Width
7.1mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7769L2TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF7769L2TR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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