IRF7779L2TRPBF

N-Channel Power MOSFET, 150V Drain-to-Source Voltage (Vdss), 11mΩ Max On-Resistance (Rds On), and 375A Continuous Drain Current (ID). Features low input capacitance of 6.66nF and a maximum power dissipation of 3.3W. Designed for surface mount applications with a tape and reel package containing 4000 units. This silicon, metal-oxide semiconductor FET is HALOGEN FREE and ROHS COMPLIANT.