N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for surface mounting. Features 30V Drain-to-Source Breakdown Voltage (Vdss) and a maximum continuous drain current of 8.3A. Offers a low Drain-Source On-Resistance (Rds On) of 25mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Includes fast switching characteristics with turn-on delay time of 6.3ns and fall time of 2.2ns. Packaged in an SOIC case.
PackageSOIC
Current Rating8.3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF7807VD1PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.3A |
| Current Rating | 8.3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 25MR |
| Fall Time | 2.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 20V |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FETKY™ |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 6.3ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7807VD1PBF Datasheet
Download the complete datasheet for International Rectifier IRF7807VD1PBF to view detailed technical specifications.
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