N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for surface mounting. Features 30V Drain-to-Source Breakdown Voltage (Vdss) and a maximum continuous drain current of 8.3A. Offers a low Drain-Source On-Resistance (Rds On) of 25mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Includes fast switching characteristics with turn-on delay time of 6.3ns and fall time of 2.2ns. Packaged in an SOIC case.
PackageSOIC
Current Rating8.3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF7807VD1PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
8.3A
Current Rating
8.3A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
25MR
Fall Time
2.2ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
20V
Package Quantity
95
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
25mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
FETKY™
Turn-Off Delay Time
11ns
Turn-On Delay Time
6.3ns
DC Rated Voltage
30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7807VD1PBF Datasheet
Download the complete datasheet for International Rectifier IRF7807VD1PBF to view detailed technical specifications.
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