N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) for surface mount applications. Features a continuous drain current of 8.3A and a drain-to-source breakdown voltage of 30V. Offers a low drain-source on-resistance of 25mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Packaged in SOIC for tape and reel distribution.
International Rectifier IRF7807VD1TRPBF technical specifications.
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