N-Channel Power MOSFET, designed for efficient switching applications. Features a 30V drain-to-source breakdown voltage and a low 25mΩ drain-to-source resistance. Delivers a continuous drain current of 8.3A with a maximum power dissipation of 2.5W. Packaged in a compact SOIC surface-mount case, this component offers fast switching speeds with turn-on delay times as low as 6.3ns and fall times of 2.2ns. RoHS compliant and lead-free for environmental consideration.
PackageSOIC
Current Rating8.3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF7807VD2TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.3A |
| Current Rating | 8.3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Series | FETKY™ |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 6.3ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7807VD2TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7807VD2TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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