N-Channel Silicon Metal-oxide Semiconductor FET (MOSFET) for small signal applications. Features a continuous drain current of 8.3A and a drain-to-source voltage of 30V. Offers a low on-resistance (Rds On Max) of 25mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Packaged in a lead-free SOIC (SO-8) surface-mount package.
PackageSOIC
Current Rating8.3A
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier IRF7807VPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.3A |
| Current Rating | 8.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Fall Time | 2.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 6.3ns |
| DC Rated Voltage | 30V |
| Width | 4.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7807VPBF Datasheet
Download the complete datasheet for International Rectifier IRF7807VPBF to view detailed technical specifications.
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