N-Channel Silicon Metal-oxide Semiconductor FET (MOSFET) for small signal applications. Features a continuous drain current of 8.3A and a drain-to-source voltage of 30V. Offers a low on-resistance (Rds On Max) of 25mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Packaged in a lead-free SOIC (SO-8) surface-mount package.
PackageSOIC
Current Rating8.3A
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier IRF7807VPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
8.3A
Current Rating
8.3A
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
30V
Fall Time
2.2ns
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
3V
Number of Elements
1
Package Quantity
95
Packaging
Rail/Tube
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
25mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Row Spacing
6.3mm
Series
HEXFET®
Termination
SMD/SMT
Turn-Off Delay Time
11ns
Turn-On Delay Time
6.3ns
DC Rated Voltage
30V
Width
4.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7807VPBF Datasheet
Download the complete datasheet for International Rectifier IRF7807VPBF to view detailed technical specifications.
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