
N-Channel Silicon Metal-oxide Semiconductor FET (MOSFET) for small signal applications. Features a continuous drain current of 8.3A and a drain-to-source voltage of 30V. Offers a low on-resistance (Rds On Max) of 25mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Packaged in a lead-free SOIC (SO-8) surface-mount package.
International Rectifier IRF7807VPBF technical specifications.
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