International Rectifier
IRF7809AV
Power Field-Effect Transistor, 13.3A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
PackageSOIC
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier IRF7809AV technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
13.3A
Drain to Source Voltage (Vdss)
30V
Gate to Source Voltage (Vgs)
12V
Input Capacitance
3.78nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Elements
1
Package Quantity
95
Packaging
Rail/Tube
Power Dissipation
2.5W
Rds On Max
9mR
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF7809AV Datasheet
Download the complete datasheet for International Rectifier IRF7809AV to view detailed technical specifications.
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