N-Channel Power MOSFET, 30V Vds, 13.3A continuous drain current, and 9mΩ Rds(on). This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a 1V threshold voltage and a 1V nominal Vgs. Operating across a temperature range of -55°C to 150°C, it offers a maximum power dissipation of 2.5W. Packaged in a lead-free, RoHS compliant SOIC (SOP-8) surface-mount case, it is suitable for various electronic applications.
PackageSOIC
Current Rating17A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF7809AVPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 13.3A |
| Current Rating | 17A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 3.78nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 96ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7809AVPBF Datasheet
Download the complete datasheet for International Rectifier IRF7809AVPBF to view detailed technical specifications.
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