International Rectifier
IRF7809AVTRPBF
Power Field-Effect Transistor, 13.3A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
PackageSO
Current Rating13.3A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7809AVTRPBF technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 14.6A |
| Current Rating | 13.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 9MR |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 3.78nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 96ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7809AVTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7809AVTRPBF to view detailed technical specifications.
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