IRF7811APBF

Power Field-Effect Transistor, 11A I(D), 28V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8

PackageSOIC

MountingSurface Mount

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International Rectifier IRF7811APBF technical specifications.

Package/Case

SOIC

Continuous Drain Current (ID)

11A

Drain to Source Voltage (Vdss)

28V

Input Capacitance

1.76nF

Max Power Dissipation

2.5W

Mount

Surface Mount

Package Quantity

Packaging

Rail/Tube

Rds On Max

10mR

RoHS Compliant

Yes

Series

HEXFET®

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.