International Rectifier
IRF7811ATRPBF
Power Field-Effect Transistor, 11.4A I(D), 28V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7811ATRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 28V |
| Input Capacitance | 1.76nF |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7811ATRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7811ATRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.