N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for surface mount applications. Features a continuous drain current of 10.8A and a drain-to-source voltage of 30V. Offers a maximum power dissipation of 2.5W with a nominal gate-source threshold voltage of 3V. Operates across a temperature range of -55°C to 150°C, with fast switching characteristics including a 8.6ns turn-on delay and 10ns fall time. Packaged in a compact SOIC (MS-012AA) form factor, this component is RoHS and Lead Free compliant.
PackageSOIC
Current Rating14A
MountingSurface Mount
Power2.5W
Quick Jump:
Technical Specifications
International Rectifier IRF7811AVPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 10.8A |
| Current Rating | 14A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.801nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 8.6ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7811AVPBF Datasheet
Download the complete datasheet for International Rectifier IRF7811AVPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
