N-CHANNEL MOSFET with 30V Drain to Source Breakdown Voltage and 14A Continuous Drain Current. Features low 12mOhm Drain to Source Resistance (Rds On Max) and 15.6nC Gate Charge. Operates with a maximum Gate to Source Voltage of 12V, exhibiting 11ns Turn-On Delay and 9.9ns Fall Time. Packaged in SOIC for surface mounting, this component offers a maximum power dissipation of 3.1W and operates across a temperature range of -55°C to 150°C.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
International Rectifier IRF7811WTRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
14A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
12mR
Drain to Source Voltage (Vdss)
30V
Fall Time
9.9ns
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
2.335nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.1W
Radiation Hardening
No
Rds On Max
12mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
29ns
Turn-On Delay Time
11ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7811WTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7811WTRPBF to view detailed technical specifications.
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