N-Channel Power MOSFET, surface mount, featuring 150V drain-source breakdown voltage and 5.1A continuous drain current. Offers a maximum on-resistance of 44mΩ at a nominal Vgs of 4V. This silicon, metal-oxide semiconductor FET operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2.5W. The component is RoHS compliant and lead-free, packaged in an SOP-8 (SOIC) case.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7815PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 44MR |
| Fall Time | 8.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.647nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 8.4ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7815PBF Datasheet
Download the complete datasheet for International Rectifier IRF7815PBF to view detailed technical specifications.
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