N-Channel Power MOSFET, surface mount, featuring 150V drain-source breakdown voltage and 5.1A continuous drain current. Offers a maximum on-resistance of 44mΩ at a nominal Vgs of 4V. This silicon, metal-oxide semiconductor FET operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2.5W. The component is RoHS compliant and lead-free, packaged in an SOP-8 (SOIC) case.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7815PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
5.1A
Drain to Source Breakdown Voltage
150V
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
44MR
Fall Time
8.3ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.647nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
95
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
14ns
Turn-On Delay Time
8.4ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7815PBF Datasheet
Download the complete datasheet for International Rectifier IRF7815PBF to view detailed technical specifications.
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